DocumentCode :
1725374
Title :
AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO2 and polycrystalline GaAs in the extrinsic base and collector
Author :
Mochizuki, K. ; Nakamur, T. ; Tanoue, T. ; Masuda, H. ; Horiuchi, M.
Author_Institution :
University of California
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
93
Lastpage :
94
Keywords :
Capacitance; Circuit optimization; Conductivity; Crystallization; Electrodes; Electron devices; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Laboratories;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009596
Filename :
1009596
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1725374
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