• DocumentCode
    1725374
  • Title

    AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO2 and polycrystalline GaAs in the extrinsic base and collector

  • Author

    Mochizuki, K. ; Nakamur, T. ; Tanoue, T. ; Masuda, H. ; Horiuchi, M.

  • Author_Institution
    University of California
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    93
  • Lastpage
    94
  • Keywords
    Capacitance; Circuit optimization; Conductivity; Crystallization; Electrodes; Electron devices; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Laboratories;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009596
  • Filename
    1009596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725374