• DocumentCode
    1725397
  • Title

    Neural network modeling of fabrication yield using manufacturing data

  • Author

    Mevawalla, Z.N. ; May, G.S. ; Honjo, M. ; Kiehlbauch, M.W.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    This paper describes the creation of artificial neural network models using production line data and illustrates their usefulness for process control in semiconductor manufacturing. Three artificial neural network models are created. The first models a high aspect ratio etch process. The other two are created to predict yield metrics from inline critical dimension (CD) measurements. One model predicts the number of faults on a die, and the other predicts the probability of die failure at probe. The high aspect ratio etch model has an average prediction error of 3.9%. The average prediction error for the number of faults on a die is 14.9%, and the average prediction error for probability of die failure at probe is 21.8%. A sensitivity analysis is performed on each model to illustrate how they can be used to judge the relative impact of each input.
  • Keywords
    dies (machine tools); etching; failure analysis; integrated circuit yield; neural nets; probability; probes; process control; sensitivity analysis; units (measurement); artificial neural network models; average prediction error; critical dimension measurements; die failure; fabrication yield; high aspect ratio etch process; probability; probe; process control; production line data; semiconductor manufacturing; sensitivity analysis; Artificial neural networks; Data models; Neurons; Object oriented modeling; Predictive models; Semiconductor device measurement; Semiconductor device modeling; Neural networks; advanced process control; production line; semiconductor manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
  • Conference_Location
    Saratoga Springs, NY
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-61284-408-4
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2011.5898198
  • Filename
    5898198