Title :
Dislocation free gate process using in-situ doped polysilicon thin films by crystallization-induced stress of the films
Author :
Hashimoto, Chiemi M. ; Miura, Hideo ; Asayama, Kyoichiro ; Ohta, Hiroyuki ; Keda, Shuji
Author_Institution :
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
fDate :
6/15/1905 12:00:00 AM
Keywords :
Annealing; Crystallization; Leakage current; MOSFETs; Residual stresses; Semiconductor films; Semiconductor thin films; Silicon; Temperature; Transistors;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009600
