• DocumentCode
    1725459
  • Title

    Dislocation free gate process using in-situ doped polysilicon thin films by crystallization-induced stress of the films

  • Author

    Hashimoto, Chiemi M. ; Miura, Hideo ; Asayama, Kyoichiro ; Ohta, Hiroyuki ; Keda, Shuji

  • Author_Institution
    Mechanical Engineering Research Laboratory, Hitachi, Ltd.
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    103
  • Lastpage
    104
  • Keywords
    Annealing; Crystallization; Leakage current; MOSFETs; Residual stresses; Semiconductor films; Semiconductor thin films; Silicon; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009600
  • Filename
    1009600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725459