• DocumentCode
    1725582
  • Title

    Demonstrating the potential of 6h-silicon carbide for power devices

  • Author

    Palmour, J.W. ; Edmond, J.A. ; Carter, C.H., Jr.

  • Author_Institution
    Cree Research, Inc.
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    114
  • Lastpage
    115
  • Keywords
    Breakdown voltage; Current density; Doping; Electric breakdown; MOSFETs; Rectifiers; Silicon carbide; Temperature; Thermal conductivity; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009604
  • Filename
    1009604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725582