Basics and applications of charge pumping in submicron MOSFET´s

In this paper a review is made of the principles and the various applications of charge pumping in submicron MOSFETs. The use of the technique for the analysis of MOSFET degradation, energy and both lateral and vertical spatial profiling of the interface traps is discussed. The role and detection of so-called geometric components is illustrated, and the recently discovered ability of the technique to characterise single interface traps in submicron MOSFETs is demonstrated. Finally, the application of charge pumping in other devices, such as SOI-MOSFETs, EEPROM-cells and power transistors is briefly indicated