Title :
High voltage implanted RESURF p-LDMOS using BICMOS technology
Author :
Zhou, Ming-Jiang ; De Bruycker, A. ; Van Calster, A. ; Witters, J.
Author_Institution :
University of Twente
fDate :
6/15/1905 12:00:00 AM
Keywords :
BiCMOS integrated circuits; Boron; CMOS technology; Diodes; Doping profiles; Electric breakdown; Implants; Impurities; Information systems; Voltage;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009607
