Title :
Uitra-low on-resistance p-channel lateral DMOS fabricated on [110]-oriented Si substrate
Author :
Throngnumchai, K.
Author_Institution :
Nissan Research Center, Nissan Motor Co., Ltd.
fDate :
6/15/1905 12:00:00 AM
Keywords :
Boron; MOSFETs; Metallization; Oxidation; Q measurement; Rough surfaces; Scattering; Surface roughness; Switching circuits; Threshold voltage;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009608
