DocumentCode

1725659

Title

Uitra-low on-resistance p-channel lateral DMOS fabricated on [110]-oriented Si substrate

Author

Throngnumchai, K.

Author_Institution

Nissan Research Center, Nissan Motor Co., Ltd.

fYear

1993

fDate

6/15/1905 12:00:00 AM

Firstpage

122

Lastpage

123

Keywords

Boron; MOSFETs; Metallization; Oxidation; Q measurement; Rough surfaces; Scattering; Surface roughness; Switching circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1993. 51st Annual

Type

conf

DOI

10.1109/DRC.1993.1009608

Filename

1009608