Experimental realization of the bound state resonant tunneling transistor

Author

Chen, W.L. ; Haddad, G.I. ; Munns, G.O. ; East, J.R.

Author_Institution

The University of Michigan

fYear

1993

fDate

6/15/1905 12:00:00 AM

Firstpage

126

Lastpage

127

Keywords

Electrons; Energy states; Gold; Indium compounds; Leakage current; Resonant tunneling devices; Surface resistance; Temperature; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1993. 51st Annual

Type

DOI

10.1109/DRC.1993.1009609

Filename

1009609

Link To Document