Title :
Experimental realization of the bound state resonant tunneling transistor
Author :
Chen, W.L. ; Haddad, G.I. ; Munns, G.O. ; East, J.R.
Author_Institution :
The University of Michigan
fDate :
6/15/1905 12:00:00 AM
Keywords :
Electrons; Energy states; Gold; Indium compounds; Leakage current; Resonant tunneling devices; Surface resistance; Temperature; Testing; Voltage;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009609
