DocumentCode
1725696
Title
Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si
Author
Atanassova, E. ; Spassov, D.
Author_Institution
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Volume
2
fYear
1997
Firstpage
613
Abstract
Tantalum pentoxide films (13-260 nm) on p-type Si have been prepared by thermal oxidation at 673-873 K of rf sputtered Ta films and have been studied using Al-Ta2O5-Si capacitors. Both dielectric constant and refractive index were found to depend on the thickness of the Ta2O5 layers. Layers with dielectric constant 25-32 were obtained. A decreasing trend in the leakage current was found upon increasing oxidation temperature from 673 K to 873 K. Leakage current density of 10-8-3×10-7 A cm-2 at 1 MV cm- effective field was achieved
Keywords
MOS capacitors; insulating thin films; leakage currents; oxidation; permittivity; refractive index; tantalum compounds; 673 to 873 K; Al-Ta2O5-Si; Al-Ta2O5-Si capacitor; RF sputtered Ta film; dielectric constant; electrical properties; leakage current; p-type Si substrate; refractive index; tantalum pentoxide thin film; thermal oxidation; Capacitors; Dielectric constant; Dielectric thin films; Leakage current; Optical films; Oxidation; Refractive index; Semiconductor films; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632916
Filename
632916
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