Room-temperature operation of InGaAs-based hot-electron transistors

Author

Moise, T.S. ; Seabaugh, A.C. ; Beam, E.A., III ; Kao, Y.C. ; Randall, J.N.

Author_Institution

Central Research Laboratories - Texas Instruments Incorporated

fYear

1993

fDate

6/15/1905 12:00:00 AM

Firstpage

128

Lastpage

129

Keywords

Electrons; Energy consumption; Indium compounds; Indium gallium arsenide; Instruments; Laboratories; RLC circuits; Temperature; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1993. 51st Annual

Type

DOI

10.1109/DRC.1993.1009610

Filename

1009610

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