• DocumentCode
    1725727
  • Title

    RIE nitrogen plasma-induced structural changes in thin SiO2 layers

  • Author

    Atanassova, E. ; Paskaleva, A.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
  • Volume
    2
  • fYear
    1997
  • Firstpage
    617
  • Abstract
    Reactive Ion Etching (RIE) damage effects on thin (13 nm) thermal SiO2 on Si have been studied using X-ray photoelectron spectroscopy. It is found that 5 min exposure of the oxide to N2 plasma operating in RIE-mode causes structural modifications which manifest only as a deterioration of the oxide quality but without actual nitridation of the oxide. The presence of a small (<10%) constant amount of SiO species through the oxide and a broadening of Si-SiO2 interface transition region are detected as consequences from the RIE process
  • Keywords
    X-ray photoelectron spectra; insulating thin films; silicon compounds; sputter etching; N2; RIE nitrogen plasma; Si-SiO2; Si-SiO2 interface; SiO2; X-ray photoelectron spectroscopy; oxide quality; reactive ion etching; structural damage; thermal SiO2 layer; Anisotropic magnetoresistance; Dry etching; Nitrogen; Nuclear and plasma sciences; Plasma applications; Plasma chemistry; Plasma density; Plasma temperature; Spectroscopy; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.632917
  • Filename
    632917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725727