Title :
Surface related failure mechanisms in polyimide passivated L-band MMICs
Author :
Halkias, G. ; Christou, A. ; Huang, K. ; Li, J. ; Papanicolaou, N.
Author_Institution :
CALCE Electron. Packaging Res. Center, Maryland Univ., College Park, MD, USA
Abstract :
The polyimide passivation reliability in an L-band transimpedance amplifier is evaluated. In this study of cascode-type amplifiers, it was determined that gate leakage in the FETs of the inverting amplifier followed by gold electromigration in the drain contacts of the output stage MESFETs is the primary failure mechanism. This study shows that the presence of surface states at the GaAs-polyimide interface increases gate leakage in the output stage resulting in failure.<>
Keywords :
MMIC; circuit reliability; electromigration; failure analysis; field effect integrated circuits; gallium arsenide; interface electron states; leakage currents; microwave amplifiers; passivation; polymer films; Au electromigration; FETs; GaAs; GaAs-polyimide interface; L-band; MMICs; cascode-type amplifiers; drain contacts; gate leakage; inverting amplifier; output stage MESFETs; polyimide passivation reliability; surface related failure mechanisms; surface states; transimpedance amplifier; Bandwidth; Failure analysis; Feedback; L-band; MESFETs; MMICs; Optical amplifiers; Passivation; Polyimides; Resistors;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283272
