DocumentCode :
1725763
Title :
A novel quantum effect fet with resonantly modulated transfer characteristics
Author :
Ohno, Y. ; Tsuchiya, M. ; Sakaki, H.
Author_Institution :
Institute of Industrial Science, Univ. of Tokyo
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
132
Lastpage :
133
Keywords :
Degradation; Double-gate FETs; Electron mobility; Energy states; Gallium arsenide; Intrusion detection; Optical scattering; Particle scattering; Resonance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009612
Filename :
1009612
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1725763
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