Title :
FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
A capacitor-less DRAM cell based on ferroelectric-gate memory transistor structure, FErroelectric-DRAM (FEDRAM), is introduced. Compared to the conventional DRAM cell, it offers much simpler cell structure, longer retention time, better scalability, and lower power consumption. Cell size of 4F2 can be realized. It is also most suitable for embedded applications. Recent developments of the HfO2-based ferroelectrics have overcome the shortcomings of PZT and SBT for FEDRAM technology, and make the commercialization of FEDRAM much closer to reality.
Keywords :
DRAM chips; ferroelectric storage; field effect transistor circuits; hafnium compounds; high-k dielectric thin films; 4F2 cell size; FEDRAM technology; HfO2; PZT; SBT; capacitor-less DRAM cell; cell structure; ferroelectric-DRAM; ferroelectric-gate memory transistor structure; ferroelectric-gated field-effect transistor; lower power consumption; Capacitors; Ferroelectric films; Hafnium compounds; Logic gates; Random access memory; Silicon; Transistors;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849350
