Reliability of 0.1 mu m InP HEMTs

Author

LaCombe, Donald J. ; Hu, W.W. ; Bardsley, F.R.

Author_Institution

General Electric. Co., Syracuse, NY, USA

fYear

1993

Firstpage

364

Lastpage

371

Abstract

The results of an extensive life test program of state-of-the-art InP HEMTs with 0.1- mu m gate lengths are presented. High-temperature DC life tests revealed at least two degradational and one catastrophic failure mode. A decrease in g/sub m/ was observed which is a function of temperature, and which is greater for devices with higher I/sub dss/. A decrease in I/sub dss/, was observed which was a function of temperature, with an activation energy of 1.25 eV. The catastrophic failures were due to migration of ohmic metal from the contact to the gate. A median life of 30 years at 100 degrees C is predicted from the DC data. A 10000-h, 50 degrees C life test was also run, with little or no RF degradation.<>

Keywords

III-V semiconductors; failure analysis; high electron mobility transistors; indium compounds; life testing; reliability; semiconductor device testing; 0.1 micron; 1.25 eV; 100 degC; 10000 hr; 30 yr; 50 degC; InP; InP HEMTs; activation energy; failure mode; high temperature DC life tests; life test program; ohmic metal migration; Degradation; Gallium arsenide; HEMTs; Indium phosphide; Life testing; MODFETs; Noise figure; Space technology; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1993. 31st Annual Proceedings., International

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-0782-8

Type

conf

DOI

10.1109/RELPHY.1993.283274

Filename

283274