Title :
Monte carlo simulation of the effect of multiplication layer thickness in wide-bandwidth avalanche photodiodes
Author :
Chandramouli, V. ; Maziar, Christine M. ; Campbell, Joe C.
Author_Institution :
University of Texas at Austin
fDate :
6/15/1905 12:00:00 AM
Keywords :
Absorption; Avalanche photodiodes; Brillouin scattering; Charge carrier processes; Impact ionization; Indium phosphide; Monte Carlo methods; Noise reduction; Optical scattering; Semiconductor device noise;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009615
