DocumentCode
1725835
Title
Monte carlo simulation of the effect of multiplication layer thickness in wide-bandwidth avalanche photodiodes
Author
Chandramouli, V. ; Maziar, Christine M. ; Campbell, Joe C.
Author_Institution
University of Texas at Austin
fYear
1993
fDate
6/15/1905 12:00:00 AM
Firstpage
140
Lastpage
141
Keywords
Absorption; Avalanche photodiodes; Brillouin scattering; Charge carrier processes; Impact ionization; Indium phosphide; Monte Carlo methods; Noise reduction; Optical scattering; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1993. 51st Annual
Type
conf
DOI
10.1109/DRC.1993.1009615
Filename
1009615
Link To Document