• DocumentCode
    1725835
  • Title

    Monte carlo simulation of the effect of multiplication layer thickness in wide-bandwidth avalanche photodiodes

  • Author

    Chandramouli, V. ; Maziar, Christine M. ; Campbell, Joe C.

  • Author_Institution
    University of Texas at Austin
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    140
  • Lastpage
    141
  • Keywords
    Absorption; Avalanche photodiodes; Brillouin scattering; Charge carrier processes; Impact ionization; Indium phosphide; Monte Carlo methods; Noise reduction; Optical scattering; Semiconductor device noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009615
  • Filename
    1009615