Title :
Examination of the SEU sensitivity of GaAs MESFETs via 2-D computer simulation and picosecond charge collection experiments
Author :
Weatherford, T.R. ; McMorrow, D. ; Curtice, W.R. ; Campbell, A.B. ; Knudson, A.R.
Author_Institution :
SFA Inc., Landover, MD, USA
Abstract :
GaAs MESFET ICs have exhibited a high sensitivity to single event upset (SEU) effects. Two-dimensional computer simulations indicate that this sensitivity is a consequence of an electron-hole plasma created by the incident ion. This plasma modifies the fields in the device inducing current between the source and drain. These conclusions are supported by picosecond charge collection experiments.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital simulation; gallium arsenide; radiation effects; reliability; semiconductor device models; sensitivity analysis; 2D simulation; GaAs; GaAs MESFETs; SEU sensitivity; computer simulation; electron-hole plasma; picosecond charge collection experiments; single event upset; Aerospace electronics; Computer simulation; Gallium arsenide; MESFETs; Plasma applications; Plasma devices; Plasma simulation; Plasma sources; Single event upset; Space technology;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283275
