• DocumentCode
    1725850
  • Title

    ISPSD `07 Best Paper Award; Record-Low On-Resistance for 0.35 μm based Integrated XTREMOSTM Transistors

  • Author

    Moens, Peter ; Bauwens, Filip ; Desoete, Bart ; Baele, Joris ; Vershinin, Konstantin ; Ziad, Hocine ; Narayanan, E.M.Sankara ; Tack, Marnix

  • Author_Institution
    Member of the technical program committee of ISPSD, IRW, ESREF, ESD/EOS Symposium; chair of the HV reliability subcommittee of IRPS; technical program chair of ISPSD2009.
  • fYear
    2008
  • Abstract
    Experimental data are shown for integrated smart power transistors breaking the silicon limit at 100V. The performance is close to the much lower super-junction limit for the given device pitch. The device uses standard trench technology and is implemented in a 0.35 μm smart power process. Key steps to improve device performance yielding a record performance of 30 mOhm*mm2 for a Vbd of 94V are highlighted in the paper.
  • Keywords
    Awards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538878
  • Filename
    4538878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725850