Low-power MRAM for nonvolatile electronics: Electric field control and spin-orbit torques

Author

Amiri, Pedram Khalili ; Wang, K.L.

Author_Institution

Dept. of Electr. Eng., Univ. of California, Los Angeles, Los Angeles, CA, USA

fYear

2014

fDate

18-21 May 2014

Firstpage

1

Lastpage

4

Abstract

We review recent results and discuss challenges and prospects of nonvolatile magnetic random access memory (MRAM). In particular, we will focus on recent developments in magnetoelectric memory (MeRAM), where electric field control is used to replace existing current-controlled write mechanisms to achieve lower power dissipation and higher density. We will discuss scaling trends and prototype crossbar MeRAM demonstrations. We will also discuss the use of spin-orbit torque (SOT) effects for writing with reduced switching currents.

Keywords

MRAM devices; electric fields; low-power electronics; magnetoelectronics; torque; voltage control; SOT effects; current-controlled write mechanisms; electric field control; low-power MRAM; magnetoelectric memory; nonvolatile electronics; nonvolatile magnetic random access memory; power dissipation; prototype crossbar MeRAM demonstrations; spin-orbit torques; switching currents; Abstracts; Decision support systems; Magnetic tunneling; Nonvolatile memory; Power dissipation; Random access memory; Magnetic Tunnel Junctions; MeRAM; Nonvolatile Memory; SOT-MRAM; STT-RAM; Spintronics MRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2014 IEEE 6th International

Conference_Location

Taipei

Print_ISBN

978-1-4799-3594-9

Type

conf

DOI

10.1109/IMW.2014.6849352

Filename

6849352