Title :
Square-extensional mode single-crystal silicon micromechanical RF-resonator
Author :
Kaajakari, V. ; Mattila, T. ; Oja, A. ; Kiihamaki, J. ; Kattelus, H. ; Koskenvuori, M. ; Rantakari, P. ; Tittonen, I. ; Seppa, H.
Author_Institution :
VTT Inf. Technol., Espoo, Finland
Abstract :
A micromechanical 13.1 MHz bulk acoustic mode (BAW) silicon resonator is demonstrated. The vibration mode can be characterized as a 2-D plate expansion that preserves the original square shape. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching a silicon-on-insulator (SOI) wafer. The measured high quality factor (Q=130000) and current output (i/sub MAX/ /spl ap/ 160 /spl mu/A) make the resonator suitable for reference oscillator applications. An electrical equivalent circuit based on physical device parameters is derived and experimentally verified.
Keywords :
Q-factor; acoustic resonators; bulk acoustic wave devices; crystal resonators; elemental semiconductors; equivalent circuits; micromechanical resonators; silicon; sputter etching; 13.1 MHz; 160 muA; BAW; SOI wafer; Si; acoustic mode silicon resonator; electrical equivalent circuit; oscillator; prototype resonator; quality factor; reactive ion etching; silicon-on-insulator wafer; square-extensional mode single-crystal silicon micromechanical RF-resonator; Acoustic measurements; Current measurement; Equivalent circuits; Etching; Micromechanical devices; Oscillators; Prototypes; Q factor; Shape; Silicon on insulator technology;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1216924
