Title :
Effect of SET temperature on data retention performances of HfO2-based RRAM cells
Author :
Cabout, Thomas ; Vianello, E. ; Jalaguier, E. ; Grampeix, H. ; Molas, G. ; Blaise, P. ; Cueto, O. ; Guillermet, M. ; Nodin, J.F. ; Pemiola, L. ; Blonkowski, S. ; Jeannot, S. ; Denorme, S. ; Candelier, P. ; Bocquet, Michael ; Muller, Candice
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
In this paper the effect of SET temperature on data-retention performances in HfO2-based RRAM has been thoroughly investigated. We demonstrated, for the first time to our knowledge, that high temperature programming (even if it has no influence on the initial resistance) has a strong effect on thermal stability of the conductive filaments. Moreover, we highlighted the impact of SET temperature also on RESET characteristics. We gathered all these experimental evidences under a simple modeling of the filament morphology, proving that the filament size might be tuned by adjusting the programming temperature. We conclude that reducing the conductive filament diameter while keeping high density of the oxygen vacancies significantly improves data retention.
Keywords :
hafnium compounds; high-k dielectric thin films; integrated circuit modelling; random-access storage; thermal stability; HfO2; RESET characteristics; RRAM cells; SET temperature effect; conductive filament diameter reduction; data retention performances; filament morphology; filament size; high temperature programming; oxide-based resistive random access memories; oxygen vacancies; programming temperature; thermal stability; Equations; Hafnium compounds; Integrated circuits; Mathematical model; Resistance; Temperature; Temperature measurement; Resistive-switching random access memory (RRAM); data retention; modeling; temperature;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849355
