DocumentCode
1725942
Title
InAs bipolar transistors: a path to high-performance cryogenic electronics
Author
Dodd, P.E. ; Melloch, M.R. ; Lundstrom, M.S. ; Woodall, J.M. ; Pettit, D.
Author_Institution
IBM Thomas J. Watson Research Center
fYear
1993
fDate
6/15/1905 12:00:00 AM
Firstpage
152
Lastpage
153
Keywords
Bipolar transistors; Cryogenic electronics; Current density; Electrons; Indium phosphide; Leakage current; Photonic band gap; Substrates; Surface resistance; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1993. 51st Annual
Type
conf
DOI
10.1109/DRC.1993.1009621
Filename
1009621
Link To Document