Abstract :
The following topics are dealt with: trench MOSFET; lateral IGBT; high voltage devices; integration technologies; wide bandgap; SiC power diodes; switches; packaging; integrated LDMOS; GaN power HEMT; MOS devices; superjunction technology; and power IC applications.
Keywords :
MIS devices; MOSFET; electronics packaging; high electron mobility transistors; insulated gate bipolar transistors; power electronics; semiconductor diodes; switches; wide band gap semiconductors; GaN power HEMT; MOS devices; SiC power diodes; high voltage devices; integrated LDMOS; integration technologies; lateral IGBT; packaging; power IC applications; power semiconductor devices; superjunction technology; switches; trench MOSFET; wide bandgap;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
DOI :
10.1109/ISPSD.2008.4538883
