DocumentCode :
1726013
Title :
A New AC Current Switch Called MERS with Low On-State Voltage IGBTs (1.54 V) for Renewable Energy and Power Saving Applications
Author :
Shimada, Ryuichi ; Wiik, Jan A. ; Isobe, Takanori ; Takaku, Taku ; Iwamuro, Noriyuki ; Uchida, Yoshiyuki ; Molinas, Marta ; Undeland, Tore M.
Author_Institution :
Tokyo Inst. of Technol., Tokyo
fYear :
2008
Firstpage :
4
Lastpage :
11
Abstract :
Emergence of new power electronics configurations have historically been one of the important drivers for improvement of the IGBT technology. Development of new IGBTs is said to be a trade-off between saturation voltage, short-circuit capability and switching losses. With the common applications requiring high switching frequency and short-circuit capability, the saturation voltage performance has not been fully optimized. This paper describes a new configuration called the Magnetic Energy Recovery Switch (MERS). It is characterized by using simple control and low switching frequency, where saturation voltage is the main contributor to losses. The semiconductor requirements of this configuration have led to the development of a new low on-state voltage IGBT. Application in the area of wind power conversion shows potential for efficiency improvements. Additionally, due to the soft-switching nature of the MERS application, series connection of the new IGBTs in variable frequency induction heating application is shown to be easy without voltage sharing problems.
Keywords :
insulated gate bipolar transistors; power electronics; power semiconductor switches; short-circuit currents; AC current switch; MERS; low on-state voltage IGBT; magnetic energy recovery switch; power electronics; power saving application; renewable energy application; saturation voltage; short-circuit capability; switching losses; voltage 1.54 V; Driver circuits; Insulated gate bipolar transistors; Low voltage; Magnetic semiconductors; Power electronics; Renewable energy resources; Saturation magnetization; Switches; Switching frequency; Switching loss;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
Type :
conf
DOI :
10.1109/ISPSD.2008.4538885
Filename :
4538885
Link To Document :
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