Title :
Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
Author :
Kikushima, Fumie ; Sakamoto, Wataru ; Matsuo, Kenshi ; Sekine, Keisuke ; Arai, Fumihito ; Kamigaki, Tetsuya
Author_Institution :
Adv. Memory Dev. Center, Toshiba Corp. Semicond. & Storage Products Co., Yokkaichi, Japan
Abstract :
Anisotropic Inter-Poly Dielectric (AIS IPD) has been successfully developed. It enables center SiN thickness to be thicker at Floating-Gate (FG) top and thinner at FG side. Using AIS IPD, both programming speed and program saturation threshold voltage improve without reliability degradation even if the IPD physical thickness at FG side is about 2nm thinner than conventional IPD. Therefore, AIS IPD is one of the key technologies for BL pitch scaling in conventional FG type flash memory.
Keywords :
flash memories; silicon compounds; AIS IPD; SiN; anisotropic inter-poly dielectric technology; conventional floating gate type flash memory; physical thickness; pitch scaling; program saturation threshold voltage; programming speed; reliability degradation; Dielectrics; Flash memories; Nonvolatile memory; Periodic structures; Programming; Silicon; Silicon compounds; Flash momory; Inter-poly dielectric; bit-line pitch scaling;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849362
