DocumentCode
1726043
Title
Dependence of electromigration lifetime on the square of current density
Author
Hinode, Kenji ; Furusawa, Takesbi ; Homma, Yoshio
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1993
Firstpage
317
Lastpage
326
Abstract
A model to explain the conductor lifetime dependence on the square of the current density (Black´s relationship) is proposed. It is based on both experimental and computer-simulated results. The number of voids and hillocks formed per conductor length by electromigration are proportional to the current density. The relationship between the growth rate of voids (and hillocks) and the current density is derived from Fick´s diffusion equation. That relationship is shown by numerically solving a one-dimensional diffusion equation with nonuniform diffusivity and a critical concentration for void/hillock formation. The average growth rate of each void is observed to be proportional to the current density. The relationships of the number of voids and hillocks and the average void growth rate to the current density are simultaneously incorporated during electromigration resulting in the inverse square relationship between lifetime and current density.<>
Keywords
circuit reliability; current density; electromigration; grain boundaries; integrated circuit technology; metallisation; Black´s relationship; Fick´s diffusion equation; conductor lifetime dependence; critical concentration; current density; electromigration lifetime; growth rate; hillocks; model; nonuniform diffusivity; one-dimensional diffusion equation; voids; Conducting materials; Conductive films; Conductors; Current density; Electromigration; Equations; Heating; Large scale integration; Temperature dependence; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location
Atlanta, GA, USA
Print_ISBN
0-7803-0782-8
Type
conf
DOI
10.1109/RELPHY.1993.283281
Filename
283281
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