Title :
60V Lateral Trench MOSFET in 0.35 μm Technology
Author :
Disney, Don ; Chan, Wilson ; Lam, Roy ; Blattner, Robert ; Ma, Steve ; Seng, Wesley ; Chen, Jun-Wei ; Cornell, Michael ; Williams, Richard
Author_Institution :
Adv. Analogic Technol., Inc., Santa Clara, CA
Abstract :
A novel Lateral Trench MOSFET was fabricated in a 0.35 μm ModularBCDtrade technology. This device is compact, efficient, rugged, and offers hot-carrier lifetime that is far superior to equivalent LDMOS devices. Breakdown voltages up to 75 V were demonstrated.
Keywords :
MOSFET; carrier lifetime; hot carriers; LDMOS devices; ModularBCD technology; breakdown voltages; hot-carrier lifetime; lateral trench MOSFET; CMOS technology; Capacitance; Electrical resistance measurement; Electrons; Hot carrier injection; Human computer interaction; Low voltage; MOSFET circuits; Packaging; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538888
