Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area

Author

Lu, David Hongfei ; Mizushima, Tomonori ; Kitamura, Akio ; Iwamuro, Noriyuki ; Fujishima, Naoto

Author_Institution

Electron. Device Lab., Fuji Electr. Device Technol. Co. Ltd., Matsumoto

fYear

2008

Firstpage

32

Lastpage

35

Abstract

A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180 KeV before gate oxidation. The threshold voltage is well controlled by considering the mask proximity effect (MPE). The new LIGBT has a current capability of 1.2-1.6 times larger than that of its conventional counterpart. Its short-circuit capability is 1.2 J/cm², while its conventional counterpart´s is 0.192 J/cm², at a voltage of 180-210 V and a current density of 1.4 KA/cm².

Keywords

doping profiles; insulated gate bipolar transistors; ion implantation; silicon-on-insulator; enhanced safe operating area; gate oxidation; insulated gate bipolar transistor; ion implantation; lateral diffused channel region; mask proximity effect; retrograded doping profile; silicon on insulator substrate; threshold voltage; voltage 180 V to 210 V; Application specific integrated circuits; Dielectric substrates; Doping profiles; Insulated gate bipolar transistors; Logic devices; Power semiconductor devices; Robustness; Silicon on insulator technology; Surface resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1532-8

Electronic_ISBN

978-1-4244-1533-5

Type

conf

DOI

10.1109/ISPSD.2008.4538890

Filename

4538890