Title :
Improved charge control and frequency performance in InAs/AlSb HFETs
Author :
Bolognesi, C.R. ; Caine, E.J. ; Kraemer, H.
Author_Institution :
University of California in Santa Barbara
fDate :
6/15/1905 12:00:00 AM
Keywords :
Buffer layers; Frequency; HEMTs; Impact ionization; MODFETs; Power engineering and energy; Quantization; Temperature control; Thickness control; Voltage control;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009631
