Title :
An IGCT chip set for 7.2 kV (RMS) VSI application
Author :
Nistor, Iulian ; Scheinert, Maxi ; Wikström, Tobias ; Lüscher, Matthias
Author_Institution :
Corp. Res., ABB Switzerland Ltd., Baden-Dattwil
Abstract :
In this paper we present a novel Integrated Gate- Commutated Thyristor (IGCT) for application in medium voltage drives at voltage levels of 7.2kV RMS or more. Measurements of over 11kV blocking-, on-state- and expanded SOA switching behavior are the basis for a detailed description of the performance. The new design features a planar junction termination, in combination with a corrugated p-base. These design concepts provide acceptable turn-on properties and improve turn-off Safe Operating Area (SOA) simultaneously. Improved diode soft reverse recovery at low currents is demonstrated using a combination of deep buffers and the Field Charge Extraction (FCE) concept.
Keywords :
invertors; switching convertors; thyristor convertors; IGCT chip set; SOA switching behavior; field charge extraction; integrated gate-commutated thyristor; medium voltage drives; planar junction termination; safe operating area; soft reverse recovery; Application specific integrated circuits; Clamps; Medium voltage; Power semiconductor devices; Semiconductor device measurement; Semiconductor diodes; Semiconductor optical amplifiers; Switches; Switching converters; Thyristors;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538891
