DocumentCode :
1726126
Title :
Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode
Author :
Bauer, J.G. ; Duetemeyer, T. ; Hille, F. ; Humbel, O.
Author_Institution :
Infineon Technol. AG, Neubiberg
fYear :
2008
Firstpage :
40
Lastpage :
43
Abstract :
A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage VF up to 2.5 V (66 A/cm2) and a VF rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Qrr and consequently reverse recovery energy Erec of more than 35% have been achieved in comparison with a state of the art 6.5 kV emitter controlled diode.
Keywords :
MIS devices; semiconductor diodes; MOS controllable freewheeling diode; forward voltage; recovery charge; reverse recovery energy; temperature 125 C; voltage 2.5 V; voltage 6.5 kV; Anodes; Computational fluid dynamics; Plasma measurements; Plasma temperature; Power semiconductor devices; Semiconductor device measurement; Semiconductor diodes; Switching loss; Temperature control; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
Type :
conf
DOI :
10.1109/ISPSD.2008.4538892
Filename :
4538892
Link To Document :
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