مرکز منطقه ای اطلاع رساني علوم و فناوري - High frequency, high breakdown AlInAs/GaInAs junction modulated hemts (JHEMTs) with regrown ohmic contacts by MOCVD

DocumentCode :

1726129

Title :

High frequency, high breakdown AlInAs/GaInAs junction modulated hemts (JHEMTs) with regrown ohmic contacts by MOCVD

Author :

Shealy, J.B. ; Hashemi, M.M. ; Kiziloglu, K. ; DenBaars, S.P. ; Mishra, U.K. ; Liu, T.K. ; Brown, J.J. ; Lui, M.M.

Author_Institution :

University of California

fYear :

1993

fDate :

6/15/1905 12:00:00 AM

Firstpage :

177

Lastpage :

178

Keywords :

Contracts; Current density; Electric breakdown; Frequency; Gate leakage; HEMTs; Indium gallium arsenide; MOCVD; MODFETs; Ohmic contacts;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Device Research Conference, 1993. 51st Annual

Type :

conf

DOI :

10.1109/DRC.1993.1009632

Filename :

1009632

Link To Document :