Title :
HVCMOS8A: 22V-42V Rated MOS integration in a 0.18μm technology platform for High Voltage applications
Author :
Bach, Stephane ; Atzeni, Laura ; Molfese, Antonio ; Dundulachi, Alessandro ; Castellana, Elisabetta ; Croce, Giuseppe ; Contiero, Claudio
Author_Institution :
STMicroelectronics, FTM R&D, Milano
Abstract :
This paper presents a cost effective integration of 22V to 42V rated MOS in a 0.18 mum platform for high voltage applications. High voltage capability is achieved by adding only 2 masks to the baseline 3.3V CMOS. The process modularity enables appropriate customisations to address a wide range of applications with the same platform.
Keywords :
CMOS integrated circuits; masks; HVCMOS8A; MOS integration; masks; size 0.18 mum; voltage 22 V to 42 V; voltage 3.3 V; Automotive engineering; CMOS logic circuits; CMOS process; CMOS technology; Costs; Implants; Isolation technology; Logic testing; Power semiconductor devices; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538896
