• DocumentCode
    1726215
  • Title

    HVCMOS8A: 22V-42V Rated MOS integration in a 0.18μm technology platform for High Voltage applications

  • Author

    Bach, Stephane ; Atzeni, Laura ; Molfese, Antonio ; Dundulachi, Alessandro ; Castellana, Elisabetta ; Croce, Giuseppe ; Contiero, Claudio

  • Author_Institution
    STMicroelectronics, FTM R&D, Milano
  • fYear
    2008
  • Firstpage
    56
  • Lastpage
    59
  • Abstract
    This paper presents a cost effective integration of 22V to 42V rated MOS in a 0.18 mum platform for high voltage applications. High voltage capability is achieved by adding only 2 masks to the baseline 3.3V CMOS. The process modularity enables appropriate customisations to address a wide range of applications with the same platform.
  • Keywords
    CMOS integrated circuits; masks; HVCMOS8A; MOS integration; masks; size 0.18 mum; voltage 22 V to 42 V; voltage 3.3 V; Automotive engineering; CMOS logic circuits; CMOS process; CMOS technology; Costs; Implants; Isolation technology; Logic testing; Power semiconductor devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Electronic_ISBN
    978-1-4244-1533-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538896
  • Filename
    4538896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1726215