Parallel vertical hall-effect device using amplifier applied to micro-magnetic sensor

This paper demonstrates the use of an amplifier to strengthen the horizontal magnetic field of parallel vertical Hall-effect device (VHD). In this study, parallel VHD structure is used to reduce the cross-coupled noise. The guard ring is used to confine the conductive channel width for better device sensitivity. The sensitivity of the parallel VHD can be improved by using an amplifier, which amplifies the output voltage induced by the Hall effect with a smaller bias current. The proposed circuit is simulated by TSMC 0.18 μm 1P6M technology, the maximum supply-current-related sensitivity of Si is 103.41 V/AT and the maximum supply-voltage-related sensitivity of Sv is 0.199 V/VT for a bias current of 2.7 mA.