High density 20μm pitch CuSn microbump process for high-end 3D applications

Author

De Vos, J. ; Jourdain, A. ; Erismis, M.A. ; Zhang, W. ; De Munck, K. ; Manna, Antonio La ; Tezcan, D.S. ; Soussan, P.

Author_Institution

Imec, Heverlee, Belgium

fYear

2011

Firstpage

27

Lastpage

31

Abstract

In this paper, we present a high yielding 20μm pitch CuSn electroplated microbump flip chip process. The 10μm diameter bumps are organized in an area array, consisting of 440 daisy chains of 1766 bumps each. The 2cm × 2cm flip-chipped dies consist of about 1M bumps in total. The influence of processing materials like seed layer etchants and cleaning agents on the electrical performance of the daisy chains is discussed. Further Ti/Cu versus TiW/Cu seed layers for electroplating are compared. Finally inspection methods for tracing back electrically measured failures are screened.

Keywords

copper alloys; electroplating; etching; flip-chip devices; integrated circuit interconnections; tin alloys; CuSn; cleaning agents; electroplated microbump flip chip process; high-density microbump process; high-end 3D applications; seed layer etchants; size 10 mum; size 20 mum; Assembly; Copper; Current measurement; Electrical resistance measurement; Inspection; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st

Conference_Location

Lake Buena Vista, FL

ISSN

0569-5503

Print_ISBN

978-1-61284-497-8

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2011.5898486

Filename

5898486