Title :
Novel Ultra-low power RRAM with good endurance and retention
Author :
Cheng, C.H. ; Chin, Albert ; Yeh, F.S.
Author_Institution :
E.E. Dept., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4 × 105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.
Keywords :
low-power electronics; random-access storage; covalent-bond-dielectric-metal-oxide; current 0.12 nA; cycling endurance; on/off retention window; power 16 pW; power 4 muW; temperature 85 degC; ultra-low power RRAM; voltage 0.13 V; Current measurement; Nickel; Nonvolatile memory; Resistance; Switches; Temperature measurement; Voltage measurement;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556180
