• DocumentCode
    1726261
  • Title

    Novel Ultra-low power RRAM with good endurance and retention

  • Author

    Cheng, C.H. ; Chin, Albert ; Yeh, F.S.

  • Author_Institution
    E.E. Dept., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2010
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4 × 105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.
  • Keywords
    low-power electronics; random-access storage; covalent-bond-dielectric-metal-oxide; current 0.12 nA; cycling endurance; on/off retention window; power 16 pW; power 4 muW; temperature 85 degC; ultra-low power RRAM; voltage 0.13 V; Current measurement; Nickel; Nonvolatile memory; Resistance; Switches; Temperature measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556180
  • Filename
    5556180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1726261