Title :
Thermal stability and reliability in SiGe pMOSFETs for sub-20nm DRAM applications
Author :
Son, Yeongrack ; Kyung Bong Noh ; Aoulaiche, Marc ; Ritzenthaler, R. ; Schram, T. ; Spessot, A. ; Fazan, P. ; Moonju Cho ; Franco, Jacopo ; Horiguchi, Naoto ; Thean, A.
Abstract :
In this work, we investigate the thermal stability and NBTI reliability of Si1-xGex channel devices for DRAM applications for the first time. The results show that Si1-xGex channel devices have improved NBTI robustness compared to Si channel devices in DRAM peripheral transistors. It is demonstrated that the Si1-xGex channel devices with Si cap layer do not exhibit degraded electrical characteristics with DRAM related long time thermal budget and a slight improvement of NBTI is achieved due to lower interface and bulk oxide trap generation after the DRAM anneal process.
Keywords :
DRAM chips; Ge-Si alloys; MOSFET circuits; negative bias temperature instability; semiconductor device reliability; semiconductor materials; thermal stability; DRAM anneal process; DRAM applications; DRAM peripheral transistors; NBTI reliability; SiGe; bulk oxide trap generation; cap layer; channel devices; degraded electrical characteristics; long time thermal budget; pMOSFET; thermal stability; Annealing; Logic gates; Random access memory; Reliability; Silicon; Silicon germanium; Stress; DRAM; Negative bias temperature instability(NBTI); SiGe devices; oxide traps; reliability;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849377
