Title :
A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability
Author :
Rahimo, M. ; Schlapbach, U. ; Kopta, A. ; Vobecky, J. ; Schneider, D. ; Baschnagel, A.
Author_Institution :
Semicond., ABB Switzerland Ltd., Lenzburg
Abstract :
In this paper we demonstrate a fully functional high voltage and high current IGBT module rated at 3300 V consisting solely of reverse conducting (RC) IGBT chips. The RC- IGBTs were designed in accordance with the latest Enhanced Planar and Soft Punch Through technology while incorporating an integrated freewheeling diode in the same silicon volume. Future high power IGBT modules with RC-IGBT technology will be capable of providing exceptional electrical performance for the given voltage class in terms of the maximum allowable output current capability.
Keywords :
insulated gate bipolar transistors; modules; power bipolar transistors; power semiconductor diodes; IGBT module; RC-IGBT technology; integrated freewheeling diode; output power capability; reverse conducting IGBT chips; Anodes; Doping; Insulated gate bipolar transistors; Plasma applications; Plasma devices; Power generation; Power semiconductor devices; Semiconductor diodes; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538899
