Title :
Uniform 3D vertical AlOδ/Ta2O5−x/TaOy RRAM: Fabrication, characterization and mechanism analysis
Author :
Yue Bai ; Huaqiang Wu ; Riga Wu ; Ning Deng ; He Qian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
3D AlOδ/Ta2O5-x/TaOy RRAM structure with three vertical cells is demonstrated. The devices maintain good performance in endurance (>108 cycles) and retention (>104s @85°C) in comparison with planar devices. The cells in different layers also exhibits excellent uniformity in SET/RESET voltages, HRS and LRS distributions. To further increase data storage density, large HRS/LRS resistance window (>1000) and uniform 4 levels MLC operations are achieved. Moreover, temperature dependent study reveals the conductive filament rupture and formation resistive-switching mechanism, which predicts the future scaling down potential.
Keywords :
aluminium compounds; random-access storage; tantalum compounds; three-dimensional integrated circuits; 3D RRAM structure; HRS distribution; LRS distribution; MLC operations; SET/RESET voltages; conductive filament rupture; data storage density; formation resistive-switching mechanism; mechanism analysis; planar devices; scaling down potential; temperature 85 C; uniform 3D vertical RRAM; vertical cells; Electron devices; Fabrication; Performance evaluation; Resistance; Switches; Temperature dependence; Three-dimensional displays; 3D intergration; RRAM; aluminum oxide; high density; tantunlam oxide;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849383
