Uniform 3D vertical AlOδ/Ta2O5−x/TaOy RRAM: Fabrication, characterization and mechanism analysis

Author

Yue Bai ; Huaqiang Wu ; Riga Wu ; Ning Deng ; He Qian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2014

fDate

18-21 May 2014

Firstpage

1

Lastpage

4

Abstract

3D AlO_δ/Ta₂O_5-x/TaO_y RRAM structure with three vertical cells is demonstrated. The devices maintain good performance in endurance (>10⁸ cycles) and retention (>10⁴s @85°C) in comparison with planar devices. The cells in different layers also exhibits excellent uniformity in SET/RESET voltages, HRS and LRS distributions. To further increase data storage density, large HRS/LRS resistance window (>1000) and uniform 4 levels MLC operations are achieved. Moreover, temperature dependent study reveals the conductive filament rupture and formation resistive-switching mechanism, which predicts the future scaling down potential.

Keywords

aluminium compounds; random-access storage; tantalum compounds; three-dimensional integrated circuits; 3D RRAM structure; HRS distribution; LRS distribution; MLC operations; SET/RESET voltages; conductive filament rupture; data storage density; formation resistive-switching mechanism; mechanism analysis; planar devices; scaling down potential; temperature 85 C; uniform 3D vertical RRAM; vertical cells; Electron devices; Fabrication; Performance evaluation; Resistance; Switches; Temperature dependence; Three-dimensional displays; 3D intergration; RRAM; aluminum oxide; high density; tantunlam oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2014 IEEE 6th International

Conference_Location

Taipei

Print_ISBN

978-1-4799-3594-9

Type

conf

DOI

10.1109/IMW.2014.6849383

Filename

6849383