Title :
Feasibility study of emerging non-volatilememory based physical unclonable functions
Author :
Le Zhang ; Xuanyao Fong ; Chip-Hong Chang ; Zhi Hui Kong ; Roy, Kaushik
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The feasibility and quality of Memory-based Physical Unclonable Functions (MemPUFs) based on emerging Non-Volatile Memory (eNVM) technologies (Spin-Transfer Torque Magnetic Random Access Memory, Phase Change RAM, and Resistive RAM) are studied in this paper. MemPUFs using the three technologies were evaluated in terms of reliability, uniqueness and randomness using different sensing modes and under varying operating conditions. Our results show that eNVM based MemPUFs with differential sensing mode exhibit good randomness and reliability. As compared to conventional MemPUFs, eNVM based MemPUFs are better in terms of area cost.
Keywords :
MRAM devices; magnetoelectronics; phase change memories; semiconductor device reliability; semiconductor storage; area cost; eNVM based MemPUF; eNVM technologies; emerging nonvolatile memory; feasibility study; phase change RAM; physical unclonable functions; reliability; resistive RAM; sensing modes; spin-transfer torque magnetic random access memory; Entropy; Noise; Phase change random access memory; Reliability; Resistance; Sensors;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849384