Development of the 1200V FZ-diode with soft recovery characteristics by the new local lifetime control technique

This paper presents the new 1200V FZ-Diode chip using the newly developed local lifetime control technique which is a combination of the electron irradiation and the back-side laser annealing in order to realize the optimum carrier profile. Furthermore, 20% lower resistivity bulk can be utilized due to optimization of the edge termination structure to have a uniform electric field distribution. As a result, the new 1200V FZ-diode with very soft recovery characteristics has been successfully developed without increase of the reverse recovery losses compared to a conventional diode.