A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications

A new Cu_xSi_yO resistive memory, which is different from Cu-doped SiO₂ or CuxO binary oxide, is integrated successfully in standard logic technology for the first time. Key breakthrough is that data retention (10 years@ 150°C), resistance distribution (with 50x window@125°C ) and disturbance immunity significantly improved with integration simplicity advantage, as demonstrated on a 1Mb test chip. The activation energy of Cu vacancy migration in Cu_xSi_yO increases by 5 times than that in Cu_xO, giving rise to the great performance improvement. The solution is promising for both high density and low cost embedded nonvolatile memory (NVM) applications.