Title :
Impact of AlOx interfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs
Author :
Chakrabarti, Subit ; Jana, D. ; Dutta, Maitreyee ; Maikap, S. ; Yi-Yan Chen ; Jer-Ren Yang
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., KweiShan, Taiwan
Abstract :
Effects of AlOx interfacial layer in the W/AlOx/TaOx/TiN structures have been investigated for the first time. This RRAM device shows long endurance of 106 cycles and good retention at 85°C for a low current compliance of 100 μA. A physics based simulation is studied to understand the set and reset mechanism of RRAM. The nature of ions migration, potential profile and temperature of filament during switching is explained using numerical simulation done by MATLAB.
Keywords :
aluminium compounds; random-access storage; switching; tantalum compounds; titanium compounds; tungsten; MATLAB; RRAM; W-AlOx-TaOx-TiN; filament temperature; interfacial layer; ion migration; low current compliance; potential profile; reset mechanism; resistive random access memory; switching mechanism; Equations; Ions; Materials; Mathematical model; Numerical models; Resistance; Switches; AlOx; MATLAB simulation; RRAM interfacial layer; TaOx; switching mechanism;
Conference_Titel :
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4799-3594-9
DOI :
10.1109/IMW.2014.6849394
