Title :
Statistical evaluation for trap energy level of RTS characteristics
Author :
Teramoto, A. ; Fujisawa, T. ; Abe, K. ; Sugawa, S. ; Ohmi, T.
Author_Institution :
New Ind. Creation Hatchery Center, Tohoku Univ., Sendai, Japan
Abstract :
The energy distributions of traps which cause RTS noise using the array test pattern having a large number of n-MOS and p-MOS are investigated. The more traps which cause RTS noise located near the conduction band. The phenomena in p-MOS are almost the same as n-MOS. However, the number of traps in p-MOS is less than that in n-MOS. The tendency of the energy distribution of the traps near the conduction band edge is different from that near the valence band edge.
Keywords :
MOSFET; conduction bands; semiconductor device noise; statistical analysis; valence bands; RTS characteristics; RTS noise; array test pattern; conduction band edge; energy distributions; n-MOS; p-MOS; statistical evaluation; trap energy level; valence band edge; Arrays; Electron traps; Energy measurement; Logic gates; MOSFETs; Noise; MOS; RTS; noise; statistical evaluation; trap;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556186
