Title :
Optimization of Body Diode Reverse Recovery Characteristics of Lateral Power MOSFETs for Synchronous Rectifier DC-DC Converters
Author :
Xiong, Y. ; Jia, H. ; Deschaine, W. ; Sun, S. ; Cheng, X. ; Dashney, G. ; Okada, D. ; Shen, Z.J.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL
Abstract :
This paper investigates the poor body diode reverse recovery characteristics of lateral power MOSFETs. It is found that the lightly doped P-substrate accommodates an excessive amount of minority carrier storage charge when the body diode between the P-substrate and N-drain is forward biased. The excessive storage charge causes a long tail in the reverse recovery current waveform of the body diode. Two LDMOS structural variations are explored to improve the body diode performance for hard-switching synchronous rectifier DC/DC converter applications. Both simulation and experimental results show that over 90% reduction in reverse recovery charge can be achieved with the new device structures.
Keywords :
DC-DC power convertors; diodes; power MOSFET; rectifiers; LDMOS structural variations; N-drain; body diode reverse recovery characteristics; doped P-substrate; forward biased; lateral power MOSFET; minority carrier storage charge; synchronous rectifier DC-DC converters; Application software; Capacitance; Charge carrier processes; DC-DC power converters; MOSFETs; Probability distribution; Rectifiers; Semiconductor device modeling; Semiconductor diodes; Zero current switching;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538907
