DocumentCode
1726499
Title
New method for making Al single crystal interconnections on amorphous insulators
Author
Wada, Jun-ichi ; Suguro, Kyoichi ; Hayasaka, Nobuo ; Okano, Haruo
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1993
Firstpage
71
Lastpage
76
Abstract
The authors point out that Al thin films fill in the grooves on SiO/sub 2/ when no surface native oxide of Al exists. Analytical calculations have shown that the complete Al filling occurs because of the reduction of the total free energy for the Al/SiO/sub 2/ system. The filled Al lines in the grooves are single crystalline. The filled single crystal Al interconnections have excellent endurance against electromigration compared with the conventional polycrystalline interconnections.<>
Keywords
VLSI; aluminium; circuit reliability; electromigration; life testing; metallisation; Al single crystal interconnections; Al-SiO/sub 2/; SiO/sub 2/; ULSI; acceleration test; amorphous insulators; endurance against electromigration; filled lines; thin films; Amorphous materials; Annealing; Artificial intelligence; Crystallization; Grain size; Insulation; Plasma temperature; Sputtering; Transistors; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location
Atlanta, GA, USA
Print_ISBN
0-7803-0782-8
Type
conf
DOI
10.1109/RELPHY.1993.283299
Filename
283299
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