Title :
A poly-Si thermoelectric cooling device fabricated by surface micromachining technology
Author :
Jr Ching Lin ; Chen, H.J.H. ; I Yu Huang ; Huang, S.R.S.
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
In this paper, for the first time, we present a novel on-chip integrated poly-Si TE (thermoelectric) cooling device fabricated by surface micromachining technology. The area of the bridge type Peltier element is about /spl sim/40/spl times/40 (/spl mu/m/sup 2/) and there are about /spl sim/62,500 elements in 1 (cm/sup 2/) chip area. Using the sacrificial oxide released bridge type Peltier element, the parasitic thermal conduction effect can be minimized. The cooling mode TE device can achieve 5-15/spl deg/C reduction from the surrounding environment under 80 mA current drive.
Keywords :
Peltier effect; cooling; elemental semiconductors; heat conduction; micromachining; silicon; thermoelectric devices; 5 to 15 degC; 80 mA; Si; bridge type Peltier element; cooling mode thermoelectric device; current drive; novel on-chip poly-Si thermoelectric cooling device; parasitic thermal conduction effect; sacrificial oxide; surface micromachining technology; Bridge circuits; CMOS technology; Electronics cooling; Fabrication; Microelectronics; Micromachining; Monolithic integrated circuits; Tellurium; Thermoelectric devices; Thermoelectricity;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1216957
