DocumentCode :
1726590
Title :
AC hot-carrier degradation in a voltage controlled oscillator
Author :
Jiang, Chun ; Johnson, Eric ; Shaw, J.J. ; Hu, Chenming
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
fYear :
1993
Firstpage :
53
Lastpage :
56
Abstract :
It is pointed out that a voltage controlled oscillator can be a useful supplement to ring oscillators for studying AC hot-carrier-induced degradation. AC stress is carried out with a fixed gate voltage while the drain voltage rises and falls. It is found that device parameters degrade under AC stressing with the same time and voltage dependence as under DC stress, suggesting that the same mechanism(s) are at work. Oscillator frequency degradation is correlated with device degradation produced by AC or DC stressing.<>
Keywords :
CMOS integrated circuits; circuit reliability; hot carriers; linear integrated circuits; variable-frequency oscillators; AC hot-carrier degradation; AC stress; DC stressing; fixed gate voltage; frequency degradation; time dependence; voltage controlled oscillator; voltage dependence; Circuit testing; Degradation; Frequency; Hot carrier effects; Hot carriers; MOSFET circuits; Ring oscillators; Stress; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
Type :
conf
DOI :
10.1109/RELPHY.1993.283302
Filename :
283302
Link To Document :
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