Title :
A Gate-Controllable High-Voltage SCR Device with High Performance in ESD Protection and Latch-up Immunity
Author :
Chien, Tuo-Hsin ; Hsu, Klaus Y J
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
A simple gate-controllable high-voltage silicon-controlled rectifier (GC-HVSCR) is proposed in this work. With simply using an integrated control nMOS, the device can provide ESD protection while avoiding the conventionally annoying latch-up problem in SCR under normal circuit operation condition. The behavior of the proposed device has been studied by simulations and verified by real implementation in a 0.5-mum high-voltage (30 V) CMOS process.
Keywords :
MOS integrated circuits; thyristors; gate-controllable high-voltage SCR device; integrated control nMOS; latch-up immunity; silicon controlled rectifier; voltage 30 V; CMOS process; Cathodes; Centralized control; Circuit simulation; Electron devices; Electrostatic discharge; MOS devices; Protection; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1532-8
Electronic_ISBN :
978-1-4244-1533-5
DOI :
10.1109/ISPSD.2008.4538915
