Title :
Reaction of DI water and silicon and its effect on gate oxide integrity
Author :
Rajagopalan, S. ; Mitra, U. ; Pan, S. ; Gupta, K. ; Lin, C.M. ; Sery, G. ; Mitta, S. ; Hasserjian, K. ; Lo, W.J. ; Neubauer, G.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
The reaction between HF treated silicon surfaces and deionized water is investigated, and a model to explain this reaction is developed. This reaction between silicon and water results in surface microroughness of the silicon surface and can lead to degradation of gate oxide quality. Water pH and rinse time are key parameters which control the corrosive reaction. This work also showed that water cannot always be considered a safe environment for silicon.<>
Keywords :
corrosion; elemental semiconductors; reliability; semiconductor process modelling; silicon; surface chemistry; surface topography; surface treatment; HF treated; Si; Si-OH bonds; Si-SiO/sub 2/; charge to breakdown; corrosive reaction; deionized water; elemental semiconductors; gate oxide integrity; model; pre-gate clean; rinse time; soluble silicates; surface microroughness; water pH; Degradation; Design for quality; Hafnium; Lead compounds; Rough surfaces; Silicon; Surface cleaning; Surface morphology; Surface roughness; Surface treatment;
Conference_Titel :
Reliability Physics Symposium, 1993. 31st Annual Proceedings., International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-0782-8
DOI :
10.1109/RELPHY.1993.283307
